Semiconductor device

ABSTRACT

A semiconductor device includes at least three or more wiring layers stacked in an interlayer insulating film on a semiconductor substrate, a seal ring provided at the outer periphery of a chip region of the semiconductor substrate and a chip strength reinforcement provided in part of the chip region near the seal ring. The chip strength reinforcement is made of a plurality of dummy wiring structures and each of the plurality of dummy wiring structures is formed to extend across and within two or more of the wiring layers including one or none of the bottommost wiring layer and the topmost wiring layer using a via portion.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device including threeor more wiring layers.

2. Description of Related Art

According to the growing digitization of our society, demand forhigh-performance and high-speed semiconductor devices is increasing. Inorder to meet the demand, large-scale integration of the semiconductordevices has been proceeding while the multi-layering and miniaturizationof wiring are involved in. In recent years, in order to reduce parasiticcapacitance derived from the miniaturization of the wiring for thepurpose of enhancing the speed of the semiconductor devices, dielectricmaterial having a lower dielectric constant (low-k material) has beenused for an interlayer insulating film in place of conventionaldielectric oxide material such as silicon oxide and silicon nitride.

Patent Document 1: Japanese Unexamined Patent Publication No.2003-243401 Patent Document 2: Japanese Unexamined Patent PublicationNo. 2004-153015 SUMMARY OF THE INVENTION

The low dielectric constant material is significantly different inphysical characteristic from the conventional dielectric oxide material.For example, the low dielectric constant material has low Young'smodulus, low hardness, low adhesion property at the interface and a highthermal expansion coefficient. Therefore, in semiconductor devices usingthe low dielectric constant material, problems may arise such as theoccurrence of peeling or crack at the interface of the interlayerinsulating film below pads in the step of wire bonding or at the cornersof the chip due to thermal stress after sealing. The crack, peeling orthe like of the interlayer insulating film causes leakage betweenwirings or disconnection and brings about critical damage to thesemiconductor devices.

According to a recent technique against such problems, dummy wiringstructures are provided as a chip strength reinforcement separately froma seal ring provided at the outer periphery of a chip region of asemiconductor substrate (wafer). However, for example, if the stress ishigh, the crack, peeling or the like of the interlayer insulating filmcannot be prevented enough by such a technique.

With respect to a semiconductor device including multilayer wiring usinginterlayer insulating films made of dielectric material such as lowdielectric constant material having low Young's modulus, low hardness,low adhesion property at the interface and a high thermal expansioncoefficient, an object of the present invention is to surely prevent thecrack, peeling or the like of the interlayer insulating film derivedfrom mechanical or thermal stress.

As a result of examination of the reasons why the conventional chipstrength reinforcement cannot fully prevent the crack or the like of theinterlayer insulating film, the inventors of the present invention havemade the following finding. A dummy wiring structure as the conventionalchip strength reinforcement is formed through the topmost wiring layerto the bottommost wiring layer (or an impurity layer formed in thesurface of the semiconductor substrate), just like the seal ring.Therefore, the dummy wiring structure may shrink due to a difference instress-related coefficient (Young's modulus, etc., hereinafter it isreferred to as a stress coefficient) between the wiring material and theinterlayer insulating film material. As a result, stress is concentratedon the dummy wiring structure, thereby causing the peeling or the likeof the interlayer insulating film.

The present invention has been achieved based on the above-describedfinding. Specifically, a semiconductor device of the present inventionis a semiconductor device including at least three or more wiring layersstacked in an interlayer insulating film on a semiconductor substrate.The semiconductor device includes: a seal ring provided at the outerperiphery of a chip region of the semiconductor substrate; and a chipstrength reinforcement provided in part of the chip region near the sealring, wherein the chip strength reinforcement is made of a plurality ofdummy wiring structures and each of the plurality of dummy wiringstructures is formed to extend across and within two or more of thewiring layers including one or none of the bottommost wiring layer andthe topmost wiring layer using a via portion.

In the present specification, the dummy wirings are wirings not includedin the semiconductor integrated circuit, i.e., those irrelevant to theelectrical characteristics of the semiconductor device.

In the semiconductor device of the present invention, the bottommostwiring layer may be an impurity layer formed in the surface of thesemiconductor substrate.

In the semiconductor device of the present invention, the dummy wiringstructures may be replaced with wiring structures which are arranged inthe same manner as the dummy wiring structures to function as signallines or power source lines.

In the semiconductor device of the present invention, at least two ofthe plurality of dummy wiring structures have at least a portion formedin the same wiring layer, respectively, or alternatively, at least oneof a pair of dummy wiring structures among the plurality of dummy wiringstructures has a portion formed in one of the wiring layers in which theother of the pair is not formed.

In the semiconductor device of the present invention, it is preferablethat at least two of the plurality of dummy wiring structures have aportion formed in the bottommost wiring layer, respectively.

In the semiconductor device of the present invention, it is preferablethat at least one of the plurality of dummy wiring structures has aportion extending in a certain direction in at least one of the wiringlayers and another portion extending in a different direction in thesame wiring layer and being connected to the certain portion.

In the semiconductor device of the present invention, it is preferablethat the plurality of dummy wiring structures include a first dummywiring structure and a second dummy wiring structure whose topmostportion is positioned below the topmost portion of the first dummywiring structure, at least two portions of the first dummy wiringstructure are formed in at least two wiring layers, respectively, and atleast two portions of the second dummy wiring structure are formed inthe at least two wiring layers, respectively, and one of the at leasttwo portions of the first dummy wiring structure formed in one of the atleast two wiring layers and one of the at least two portions of thesecond dummy wiring structure formed in the other of the at least twowiring layers overlap each other when viewed in plan. In this case, itis preferable that the second dummy wiring structure is formed to extendacross and within three or more wiring layers using via portions andconfigured in the form of a ring and a portion of the first dummy wiringstructure is positioned inside the ring-shaped second dummy wiringstructure. Further, it is more preferable that the first dummy wiringstructure is formed to extend across and within three or more wiringlayers using via portions and configured in the form of a ring and aportion of the second dummy wiring structure is positioned inside thering-shaped first dummy wiring structure.

In the semiconductor device of the present invention, each of theplurality of dummy wiring structures may contain copper.

In the semiconductor device of the present invention, the plurality ofdummy wiring structures are provided at the corners of the chip regionoutside the seal ring, or alternatively, the plurality of dummy wiringstructures are provided at the corners of the chip region outside andinside the seal ring. Further, the plurality of dummy wiring structuresmay be provided at the corners of the chip region outside and inside theseal ring and along the outer periphery of the chip region except thechip corners, or alternatively, the plurality of dummy wiring structuresare provided at the corners of the chip region inside the seal ring.

According to the present invention, the chip strength reinforcement madeof the dummy wiring structures is provided separately from the sealring. Therefore, even if the multilayered interlayer insulating film ismade of dielectric material such as low dielectric constant materialhaving low Young's modulus, low hardness, low adhesion property at theinterface and a high thermal expansion coefficient, part of theinterlayer insulating film near the dummy wiring structures improves inmechanical strength, particularly in the thickness direction. Further,as the chip strength reinforcement is made of a plurality of dummywiring structures, each of which is formed to extend across and withintwo or more wiring layers including one or none of the bottommost andtopmost wiring layers, stress concentration around the dummy wiringstructures due to the difference in stress coefficient between thewiring material and the interlayer insulating film material isalleviated. In other words, stress is distributed to different points.As a result, the crack, peeling or the like of the interlayer insulatingfilm derived from mechanical or thermal stress during assembly into apackage or the like is prevented with reliability, thereby preventingthe occurrence of failure.

As described above, the present invention relates to a semiconductordevice including three or more wiring layers. If the invention isapplied to a semiconductor device including multilayer wiring structuresusing an interlayer insulating film made of low dielectric constantmaterial or the like, it effectively prevents the crack, peeling or thelike of the interlayer insulating film derived from mechanical orthermal stress. Thus, the present invention is significantly useful.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a semiconductor device according to afirst embodiment of the present invention.

FIG. 2 is an enlargement of region R (the upper left corner of a chipregion) shown in FIG. 1.

FIG. 3 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 4 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 5 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 6 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 7 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 8 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 9 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 10 is a sectional view illustrating a step of a method formanufacturing the semiconductor device of the first embodiment of thepresent invention.

FIG. 11 is a sectional view illustrating a semiconductor deviceaccording to a second embodiment of the present invention.

FIG. 12 is an enlarged plan view illustrating the upper left corner of achip region of a semiconductor device according to a third embodiment ofthe present invention.

FIG. 13 is a sectional view taken along the line B-B′ shown in FIG. 12.

FIG. 14 is a sectional view taken along the line C-C′ shown in FIG. 12.

FIG. 15 is a schematic view illustrating a combination of ring-shapeddummy wiring structures serving as a chip strength reinforcement of asemiconductor device according to a third embodiment of the presentinvention.

FIG. 16 is an enlarged plan view illustrating the upper left corner of achip region of a semiconductor device according to a fourth embodimentof the present invention.

FIG. 17 is an enlarged plan view illustrating the upper left corner of achip region of a semiconductor device according to a fifth embodiment ofthe present invention.

FIG. 18 is an enlarged plan view illustrating the upper left corner of achip region of a semiconductor device according to a sixth embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE INVENTION First Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a first embodiment of the present invention will beprovided with reference to the drawings.

FIG. 1 is a plan view of a semiconductor device of the first embodiment,in particular a semiconductor chip provided with wiring structures. FIG.2 is an enlargement of region R (the upper left corner of a chip region)shown in FIG. 1.

First, the configuration of the semiconductor device of the presentembodiment will be explained with reference to FIGS. 1 and 2. As shownin FIGS. 1 and 2, a plurality of chip regions 1 are provided on a waferas a semiconductor substrate (each of the chip regions will be asemiconductor chip after dicing). A scribed region 2 defines the chipregions 1. A seal ring 4 is provided at the periphery of each of thechip regions 1 to surround a circuit region and aluminum pads 3 areprovided along the edge of the circuit region for electrical connectionbetween the semiconductor chip and an external circuit. The seal ring 4is prepared by stacking ring-shaped patterns (when viewed in plan) eachincluding a via portion 4 b and a wiring portion 4 a formed thereon.

As described above, in a semiconductor device including an interlayerinsulating film made of low dielectric constant material or the like,there are concerns about the occurrence of peeling, crack or the like atthe interface of the interlayer insulating film below pads in the stepof wire bonding or at the corners of the chip due to thermal stressafter sealing.

In contrast, in the present embodiment described below, thesemiconductor device is configured to prevent the interlayer insulatingfilm from destruction. In particular, a chip strength reinforcementaccording to the present invention is provided near the seal ring 4arranged at the periphery of the chip region 1.

Specifically, a chip strength reinforcement 5 of the present embodimentis provided at the corners of the chip region 1 outside the seal ring 4.The chip strength reinforcement 5 is made of a plurality of dummy wiringstructures (e.g., dummy wiring structures 5A to 5C).

FIGS. 3 to 10 are sectional views illustrating the steps of a method formanufacturing the semiconductor device according to the first embodiment(sections taken along the line A-A′ of FIG. 2).

As shown in FIG. 3, a first insulating film 31 made of a silicon oxidefilm, for example, is formed on a silicon substrate as a silicon wafer(not shown). A resist mask (not shown) having a pattern of wiringgrooves is then formed on the first insulating film 31 byphotolithography, and then the first insulating film 31 is partiallyremoved by dry etching using the resist mask to form wiring grooves inthe first insulating film 31.

On the first insulating film 31 provided with the wiring grooves, forexample, a multilayer film 32 a made of a stack of a tantalum nitridefilm and a tantalum film and a copper film 32 b are deposited in thisorder.

Then, as shown in FIG. 4, part of the multilayer film 32 a and part ofthe copper film 32 b existing out of the wiring grooves are removed andthe surface of the copper film 32 b buried in the wiring grooves isplanarized by CMP (chemical mechanical polishing), for example.Accordingly, a copper wiring (first (bottommost)-layer wiring) 32 isobtained. Subsequently, for example, a silicon carbon nitride film (SiCNfilm) is deposited over the copper wiring 32 as a second insulating film33A of about 30 nm thick. On the second insulating film 33A, forexample, a silicon carbon oxide film (SiCO film) is deposited as a thirdinsulating film 34A of about 30 nm thick. On the third insulating film34A, a carbon-containing silicon oxide film (SiOC film) is deposited asa fourth insulating film 35A of about 600 nm thick as shown in FIG. 5.The surface of the fourth insulating film 35A is polished by CMP toreduce its thickness by about 100 nm such that the surface of the fourthinsulating film 35A is planarized. On the planarized fourth insulatingfilm 35A, for example, a silicon oxide film is deposited as a fifthinsulating film 36A of about 50 nm thick by CVD (chemical vapordeposition), for example.

Then, though not shown, an organic anti-reflection film is applied tothe surface of the fifth insulating film 36A and a resist mask having apattern of holes is formed on the organic anti-reflection film byphotolithography.

As shown in FIG. 6, the organic anti-reflection film, fifth insulatingfilm 36A and fourth insulating film 35A are partially removed by dryetching using the resist mask. Then, the resist mask and the organicanti-reflection film are removed by ashing. Accordingly, via holes 37 aare formed in the fifth and fourth insulating films 36A and 35A.

Then, as shown in FIG. 7, the fifth and fourth insulating films 36A and35A are partially removed by photolithography and dry etching to formwiring grooves 37 b connecting with the via holes 37 a. Then, the secondinsulating film 33A and the third insulating film 34A at the bottom ofthe via holes 37 a are also removed such that the via holes 37 a reachthe copper wiring 32.

On the fifth insulating film 36A provided with the via holes 37 a andthe wiring grooves 37 b, for example, a multilayer film 38A made of astack of a tantalum nitride film and a tantalum film and a copper film39A are deposited in this order. Then, part of the multilayer film 38Aand part of the copper film 39A existing out of the wiring grooves 37 bare removed and the surface of the copper film 39A buried in the wiringgrooves 37 b is planarized by CMP, for example. Accordingly, a copperwiring (second-layer wiring) 40A is obtained as shown in FIG. 8. In thisstep, the fifth insulating film 36A is also removed.

The above-described steps (steps of forming the second and thirdinsulating films 33A and 34A shown in FIG. 4) are repeated to form amultilayer wiring structure (in the present embodiment, a multilayerwiring structure including the first to seventh-layer wirings 32 and 40Ato 40F) as shown in FIG. 9.

Then, as shown in FIG. 10, for example, a silicon nitride film isdeposited over the seventh-layer wiring 40F by CVD or the like as asixth insulating film 42 of about 200 nm thick, an organicanti-reflection film (not shown) is applied to the surface of the sixthinsulating film 42, and then a resist mask (not shown) having a patternof holes is formed on the organic anti-reflection film byphotolithography. Using the resist mask, the organic anti-reflectionfilm and the sixth insulating film 42 are partially removed by dryetching, and then the resist mask and the organic anti-reflection filmare removed by ashing. Accordingly, a contact hole reaching theseventh-layer wiring 40F is formed in the sixth insulating film 42.Then, for example, a multilayer film made of a stack of a titanium filmand a titanium nitride film (not shown) and an aluminum film aredeposited in this order on the sixth insulating film 42 provided withthe contact hole. These films are then patterned into a cap 41.

Through the above-described steps, a seal ring 4 including the first(bottommost)-layer wiring 32, the second to seventh-layer wirings 40A to40F and the cap 41 is provided at the periphery of each of the chipregions 1. Further, a chip strength reinforcement 5 made of a pluralityof dummy wiring structures (e.g., dummy wiring structures 5A to 5E) isprovided at each of the corners of the chip region 1 outside the sealring 4. Each of the dummy wiring structures is formed to extend acrossand within two or more wiring layers including one or none of thebottommost and topmost wiring layers using the via portion. Among theplurality of dummy wiring structures, at least a portion of a dummywiring structure and at least a portion of at least any other one of thedummy wiring structures are formed in at least one same wiring layer.Further, at least one of the dummy wiring structures has a portionformed in one of the wiring layers in which at least any other one ofthe dummy wiring structures are not formed.

Specifically, each of the dummy wiring structures 5A and 5C is made of acombination of the fifth to seventh-layer wirings 40D to 40F. The dummywiring structure 5B is made of the third to sixth-layer wirings 40B to40E and the dummy wiring structure 5D is made of the second tofourth-layer wirings 40A to 40C. Further, the dummy wiring structure 5Eis made of the first to fourth-layer wirings 32 to 40C.

According to the first embodiment, the chip strength reinforcement 5made of the dummy wiring structures is provided separately from the sealring 4. Therefore, for example, even if the multilayered interlayerinsulating film includes dielectric material such as low dielectricconstant material having low Young's modulus, low hardness, low adhesionproperty at the interface and a high thermal expansion coefficient(e.g., the fourth insulating film 35A made of a carbon-containingsilicon oxide film (SiOC film)), part of the interlayer insulating filmnear the dummy wiring structures improves in mechanical strength,particularly in the thickness direction. Further, as the chip strengthreinforcement 5 is made of a plurality of dummy wiring structures formedto extend across and within two or more wiring layers including one ornone of the bottommost and topmost wiring layers, i.e., the chipstrength reinforcement 5 is not made of dummy wiring structures formedto extend through the bottommost to topmost wiring layers. Therefore,stress concentration around the dummy wiring structures due to thedifference in stress coefficient between the wiring material and theinterlayer insulating film material is alleviated. That is, stress isdistributed to different points. As a result, the crack, peeling or thelike of the interlayer insulating film derived from mechanical orthermal stress during assembly into a package or the like is preventedwith reliability, thereby preventing the occurrence of failure.

Among the plurality of dummy wiring structures providing the chipstrength reinforcement 5 of the first embodiment, if a first dummywiring structure is positioned above a second dummy wiring structure andat least two portions of the first dummy wiring structure are formed inat least two wiring layers and at least two portions of a second dummywiring structures are formed in the same at least two wiring layers, itis preferred to meet the following condition in order to prevent thecrack, peeling or the like of the interlayer insulating film withreliability. Specifically, one of the at least two portions of the firstdummy wiring structure formed in one of the at least two wiring layersand one of the at least two portions of the second dummy wiringstructure formed in the other of the at least two wiring layers overlapeach other when viewed in plan. More specifically, in the firstembodiment shown in FIG. 10, the above-described condition is satisfiedbetween the dummy wiring structures 5A and 5B, 5C and 5B, 5B and 5D, and5B and 5E.

Among the plurality of dummy wiring structures serving as the chipstrength reinforcement 5 of the first embodiment, if at least a portionof one dummy wiring structure formed in at least one of the wiringlayers and at least a portion of another wiring structure formed in thesame wiring layer are separated from each other, other portions of bothof the dummy wiring structures formed in other wiring layers may beconnected to each other.

Modified Example of First Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a modified example of the first embodiment will beprovided.

In the first embodiment described above, overlapping portions areobserved between the dummy wiring structures 5A and 5B, 5C and 5B, 5Band 5D and 5B and 5E.

In the modified example, in contrast to the first embodiment, some orall of the overlapping portions of the dummy wiring structures are notprovided. By so doing, the crack, peeling or the like of the interlayerinsulating film derived from the mechanical or thermal stress duringassembly into a package or the like is prevented with reliability whilethe area occupied by the dummy wiring structures is reduced.

Second Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a second embodiment of the present invention will beprovided with reference to the drawings.

FIG. 11 is a sectional view of a semiconductor device according to thesecond embodiment, in particular a semiconductor chip provided withwiring structures. FIG. 11 corresponds to FIG. 10 illustrating thesemiconductor device of the first embodiment. In FIG. 11, the samecomponents as those shown in FIGS. 1 to 10 are indicated by the samereference numerals for easy explanation.

As shown in FIG. 11, a seal ring 4 made of a first (bottommost)-layerwiring 32, second to seventh-layer wirings 40A to 40F and a cap 41 isprovided at the periphery of each of the chip regions 1 in the samemanner as in the first embodiment. A chip strength reinforcement 5 madeof a plurality of dummy wiring structures (e.g., dummy wiring structures51A to 51E) is provided at each of the corners of the chip region 1outside the seal ring 4. Each of the dummy wiring structures is formedto extend across and within two or more wiring layers including one ornone of the bottommost and topmost wiring layers using the via portion.Among the plurality of dummy wiring structures, at least a portion of adummy wiring structure and at least a portion of at least any other oneof the dummy wiring structures are formed in at least one same wiringlayer. Further, at least one of the dummy wiring structures has aportion formed in one of the wiring layers in which at least any one ofthe other dummy wiring structures are not formed.

A feature of the second embodiment is that at least two of the dummywiring structures have a portion formed in the bottommost wiring layer,respectively.

Specifically, dummy wiring structures 51A and 51C are made of the fifthto seventh-layer wirings 40D to 40F. A dummy wiring structure 51B ismade of the first to sixth-layer wirings 32 to 40E and a dummy wiringstructure 51D is made of the first to fourth-layer wirings 32 to 40C.Further, a dummy wiring structure 51E is made of the first tofourth-layer wirings 32 to 40C. In this manner, the dummy wiringstructures 51B, 51D and 51E have portions formed in the bottommostwiring layer, respectively.

According to the second embodiment, the following effect is obtained inaddition to the effect of the first embodiment. It is considered thatthe interface between the third insulating film 34A made of a siliconcarbon oxide film (SiCO film) and the fourth insulating film 35A made ofa carbon-containing silicon oxide film (SiOC film) formed over the first(bottommost)-layer wiring 32 is inferior in adhesion property to theother interfaces because the mechanical characteristics of the twoinsulating films are significantly different. In the present embodiment,however, the via portions of the dummy wiring structures 51B, 51D and51E (the via portions connecting the first (bottommost)-layer wiring 32and the second-layer wiring 40A) realize the connection between thethird and fourth insulating films 34A and 35A. Therefore, the adhesionat the interface between the two insulating films improves. Accordingly,the crack, peeling or the like of the interlayer insulating film derivedfrom the mechanical or thermal stress during assembly into a package orthe like is surely prevented.

Among the plurality of dummy wiring structures providing the chipstrength reinforcement 5 of the second embodiment, if a first dummywiring structure is positioned above a second dummy wiring structure andat least two portions of the first dummy wiring structure are formed inat least two wiring layers and at least two portions of the second dummywiring structures are formed in the same at least two wiring layers, itis preferred to meet the following condition in order to prevent thecrack, peeling or the like of the interlayer insulating film withreliability. Specifically, one of the at least two portions of the firstdummy wiring structure formed in one of the at least two wiring layersand one of the at least two portions of the second dummy wiringstructure formed in the other of the at least two wiring layers overlapeach other when viewed in plan. More specifically, in the secondembodiment shown in FIG. 11, the above-described condition is satisfiedbetween the dummy wiring structures 51A and 51B, 51C and 51B, 51B and51D, and 51B and 51E.

Among the plurality of dummy wiring structures serving as the chipstrength reinforcement 5 of the first embodiment, if at least a portionof one dummy wiring structure formed in at least one of the wiringlayers and at least a portion of another wiring structure formed in thesame wiring layer are separated from each other, other portions of bothof the dummy wiring structures formed in other wiring layers may beconnected to each other.

Modified Example of Second Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a modified example of the second embodiment of thepresent invention will be provided.

In the second embodiment described above, the dummy wiring structures51A to 51E, for example, are provided to function as the chip strengthreinforcement 5.

In the modified example, however, some or all of the dummy wiringstructures having portions formed in the bottommost wiring layer, e.g.,the dummy wiring structures 51A to 51C, are not provided. By so doing,the crack, peeling or the like of the interlayer insulating film derivedfrom the mechanical or thermal stress during assembly into a package orthe like is prevented with reliability while the area occupied by thedummy wiring structures is reduced.

Further, in the second embodiment described above, overlapping portionsare observed between the dummy wiring structures 51A and 51B, 51C and51B, 51B and 51D and 51B and 51E.

In the modified example, however, some or all of the overlappingportions of the dummy wiring structures are not provided. By so doing,the crack, peeling or the like of the interlayer insulating film derivedfrom various stresses is prevented with reliability while the areaoccupied by the dummy wiring structures is reduced.

Third Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a third embodiment will be provided with referenceto the drawings.

FIG. 12 is an enlarged plan view of the upper left corner of a chipregion of a semiconductor device according to the third embodiment (inparticular a semiconductor chip provided with wiring structures) similarto the enlargement of the region R indicated in FIG. 1. FIG. 13 is asectional view taken along the line B-B′ of FIG. 12 and FIG. 14 is asectional view taken along the line C-C′ of FIG. 12. In FIGS. 12 to 14,the same components as those of the first embodiment shown in FIGS. 1 to10 are indicated by the same reference numerals for easy explanation.

As shown in FIGS. 12 to 14, a seal ring 4 made of a first(bottommost)-layer wiring 32, second to seventh-layer wirings 40A to 40Fand a cap 41 is provided at the periphery of each of the chip regions 1in the same manner as in the first embodiment. A chip strengthreinforcement 5 made of a plurality of dummy wiring structures (e.g.,dummy wiring structures 61 and 62) is provided at each of the corners ofthe chip region 1 outside the seal ring 4. Each of the dummy wiringstructures is formed to extend across and within two or more wiringlayers including one or none of the bottommost and topmost wiring layersusing a via portion. Among the plurality of dummy wiring structures, atleast a portion of a dummy wiring structure and at least a portion of atleast any other one of the dummy wiring structures are formed in atleast one same wiring layer. Further, at least one of the dummy wiringstructures has a portion formed in one of the wiring layers in which atleast any other one of the dummy wiring structures are not formed.

One of the features of the third embodiment is that the dummy wiringstructures providing the chip strength reinforcement 5 is made of adummy wiring structure 61 and a dummy wiring structure 62 whose topmostportion is positioned below the topmost portion of the dummy wiringstructure 61. Further, at least two portions of the dummy wiringstructure 61 are formed in at least two wiring layers and at least twoportions of the dummy wiring structure 62 are formed in the same atleast two wiring layers and one of the at least two portions of thedummy wiring structure 61 formed in one of the at least two wiringlayers and one of the at least two portions of the dummy wiringstructure 62 formed in the other of the at least two wiring layersoverlap each other when viewed in plan.

The other feature of the third embodiment is that each of the dummywiring structures 61 and 62 is formed to extend across and within threeor more wiring layers using via portions and configured in the form of aring (when viewed in section). Further, a portion of the dummy wiringstructure 61 is arranged inside the ring-shaped dummy wiring structure62 and a portion of the dummy wiring structure 62 is arranged inside thering-shaped dummy wiring structure 61. FIG. 15 schematically shows thering-shaped dummy wiring structures 61 and 62 in a combined state. Thedummy wiring structures 61 and 62 are not electrically connected.

More specifically, the dummy wiring structure 61 is made of the fourthto seventh-layer wirings 40C to 40F and the dummy wiring structure 62 ismade of the first to fifth-layer wirings 32 to 40D. The fourth-layerwiring 40C of the dummy wiring structure 61 is arranged inside thering-shaped dummy wiring structure 62 and the fifth-layer wiring 40D ofthe dummy wiring structure 62 is arranged inside the ring-shaped dummywiring structure 61. That is, the fourth-layer wiring 40C of the dummywiring structure 61 and the fifth-layer wiring 40D of the dummy wiringstructure 62 overlap each other when viewed in plan.

According to the third embodiment, the ring-shaped dummy wiringstructures are combined. Therefore, the crack, peeling or the like ofthe interlayer insulating film derived from the mechanical or thermalstress during assembly into a package or the like is surely prevented.

According to the third embodiment, both of the dummy wiring structures61 and 62 are ring-shaped. However, one of the dummy wiring structures61 and 62 may be ring-shaped and a portion of the other may be arrangedinside the ring-shaped dummy structure. Even in this case, the crack,peeling or the like of the interlayer insulating film derived fromvarious stresses is surely prevented.

According to the third embodiment, the ring-shaped dummy wiringstructure 61 is formed to extend across and within four layers and thering-shaped dummy wiring structure 62 is formed to extend across andwithin five layers. However, the number of layers of the ring-shapeddummy wiring structures is not particularly limited and may suitably bechanged in accordance with the position of the dummy wiring structures.

Further, each of the dummy wiring structures 61 and 62 according to thethird embodiment are configured in the form of a simple closed curve.However, the number of the ring-shaped structures (closed curves)forming the dummy wiring structures is not particularly limited and maybe changed in accordance with the position of the dummy wiringstructures and the number of required wiring layers. Specifically, thedummy wiring structure may describe a figure of eight, a ladder or thelike. Or alternatively, the ring-shaped dummy wiring structures may becombined with ring-shaped structures of a ladder-shaped dummy wiringstructure, respectively, from above or below. In the third embodiment,the dummy wiring structures having ring-shaped sections, respectively,are combined. However, a dummy wiring structure which is ring-shapedwhen viewed in section and a dummy wiring structure which is ring-shapedwhen viewed in plan (the number of required layers may be 1) may becombined. Thus, the third embodiment of the present invention may varyin different ways.

In the third embodiment, if at least a portion of the dummy wiringstructure 61 formed in at least one of the wiring layers and at least aportion of the wiring structure 62 formed in the same wiring layer areseparated from each other, other portions of both of the dummy wiringstructures 61 and 62 formed in other wiring layers may be connected toeach other.

Fourth Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a fourth embodiment of the present invention will beprovided with reference to the drawings.

FIG. 16 is an enlarged plan view of the upper left corner of a chipregion of a semiconductor device (in particular a semiconductor chipprovided with wiring structures) similar to the enlargement of theregion R indicated in FIG. 1. In FIG. 16, the same components as thoseof the first embodiment shown in FIGS. 1 to 10 are indicated with thesame reference numerals for easy explanation.

As shown in FIG. 16, a seal ring 4 is provided at the periphery of thechip region 1 to surround a circuit region in the same manner as in thefirst embodiment. The seal ring 4 is provided by stacking ring-shapedpatterns (when viewed in plan) each including a via portion 4 b and awiring portion 4 a formed thereon. A chip strength reinforcement 5 isprovided at each of the corners of the chip region 1 outside the sealring 4. The chip strength reinforcement 5 is made of a plurality ofdummy wiring structures (e.g., dummy wiring structures 5A to 5C). Thedummy wiring structures providing the chip strength reinforcement 5 havethe same sectional configuration as that of the first embodiment shownin FIG. 10.

A feature of the fourth embodiment is that a chip strength reinforcement6 made of a plurality of dummy wiring structures in the same manner asthe chip strength reinforcement 5 is provided at each of the corners ofthe chip region 1 inside the seal ring 4 (in the circuit region).

According to the fourth embodiment, the following effect is obtained inaddition to the effect of the first embodiment. Specifically, inaddition to the improvement in mechanical strength of part of theinterlayer insulating film around the dummy wiring structures serving asthe chip strength reinforcement 5, the improvement in mechanicalstrength, particularly in the thickness direction, is also achieved inpart of the interlayer insulating film around the dummy wiringstructures serving as the chip strength reinforcement 6. Further, thestress derived from the difference in stress coefficient between thewiring material and the interlayer insulating film material isdistributed to different points including not only the corners of thechip but also on the circuit region.

As a result, the crack, peeling or the like of the interlayer insulatingfilm derived from the mechanical or thermal stress during assembly intoa package or the like is prevented with high reliability.

In the fourth embodiment, the dummy wiring structures providing the chipstrength reinforcements 5 and 6 have the same sectional configuration asthat of the first embodiment shown in FIG. 10. However, thisconfiguration may be replaced with other sectional configurations suchas that of the second embodiment shown in FIG. 11 or that of the thirdembodiment shown in FIGS. 13 and 14. The dummy wiring structuresproviding the chip strength reinforcement 6 may have a sectionalconfiguration different from that of the dummy wiring structuresproviding the chip strength reinforcement 5.

Fifth Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a fifth embodiment will be explained with referenceto the drawings.

FIG. 17 is an enlarged plan view illustrating the upper left corner of achip region of the semiconductor device according to the fifthembodiment (in particular a semiconductor chip provided with wiringstructures) similar to the enlargement of the region R indicated inFIG. 1. In FIG. 17, the same components as those of the first embodimentshown in FIGS. 1 to 10 are indicated by the same reference numerals foreasy explanation.

As shown in FIG. 17, a seal ring 4 is provided at the periphery of thechip region 1 to surround a circuit region in the same manner as in thefirst embodiment. The seal ring 4 is provided by stacking ring-shapedpatterns (when viewed in plan) each including a via portion 4 b and awiring portion 4 a formed on the via portion 4 b. A chip strengthreinforcement 5 is provided at each of the corners of the chip region 1outside the seal ring 4. The chip strength reinforcement 5 is made of aplurality of dummy wiring structures (e.g., dummy wiring structures 5Ato 5C). The dummy wiring structures providing the chip strengthreinforcement 5 have the same sectional configuration as that of thefirst embodiment shown in FIG. 10.

As features of the fifth embodiment, a chip strength reinforcement 6made of a plurality of dummy wiring structures just like the chipstrength reinforcement 5 is provided at each of the corners of the chipregion 1 inside the seal ring 4 (in the circuit region) and a chipstrength reinforcement 7 made of a plurality of dummy wiring structuresjust like the chip strength reinforcement 5 is provided along the outerperiphery of the chip region 1 outside the seal ring 4 except the chipcorners.

According to the fifth embodiment, the following effect is obtained inaddition to the effect of the first embodiment. Specifically, inaddition to the improvement in mechanical strength of part of theinterlayer insulating film around the chip strength reinforcement 5, theimprovement in mechanical strength, particularly in the thicknessdirection, is also achieved in parts of the interlayer insulating filmaround the chip strength reinforcements 6 and 7. Further, the stressderived from the difference in stress coefficient between the wiringmaterial and the interlayer insulating film material is distributed todifferent points including not only among the corners of the chip butalso the circuit region and the outer periphery of the chip. As aresult, the crack, peeling or the like of the interlayer insulating filmderived from the mechanical or thermal stress during assembly into apackage or the like is prevented with high reliability.

In the fifth embodiment, the chip strength reinforcements 5 to 7 havethe same sectional configuration as that of the first embodiment shownin FIG. 10. However, this configuration may be replaced with othersectional configurations such as that of the second embodiment shown inFIG. 11 or that of the third embodiment shown in FIGS. 13 and 14.Alternatively, two or more different sectional configurations may beused for the chip strength reinforcements 5 to 7.

Sixth Embodiment

Hereinafter, explanation of a semiconductor device and its manufacturemethod according to a sixth embodiment of the present invention will beprovided with reference to the drawings.

FIG. 18 is an enlarged plan view of the upper left part of a chip regionof the semiconductor device of the sixth embodiment (in particular asemiconductor chip provided with wiring structures) similar to theenlargement of the region R indicated in FIG. 1. In FIG. 18, the samecomponents as those of the first embodiment shown in FIGS. 1 to 10 areindicated by the same reference numerals for easy explanation.

As shown in FIG. 18, a seal ring 4 is provided at the periphery of thechip region 1 to surround a circuit region in the same manner as in thefirst embodiment. The seal ring 4 is provided by stacking ring-shapedpatterns (when viewed in plan) each including a via portion 4 b and awiring portion 4 a formed on the via portion 4 b.

A feature of the sixth embodiment, which is a difference from the firstembodiment, is that the chip strength reinforcement 5 is provided ateach of the corners of the chip region 1 inside the seal ring 4. Thechip strength reinforcement 5 is made of a plurality of dummy wiringstructures (e.g., dummy wiring structures 5A to 5C) and has the samesectional configuration as that of the first embodiment shown in FIG.10.

The peeling, crack or the like of the interlayer insulating film duringassembly into a package, for example, begins at the corners of the chipin many cases. If the chip strength reinforcement 5 is provided at eachof the corners of the chip inside the seal ring 4 as described in thepresent embodiment, such peeling or the like is prevented sufficiently.In other words, in the same manner as in the first embodiment, part ofthe interlayer insulating film around the dummy wiring structuresimproves in mechanical strength, particularly in the thicknessdirection, and the stress derived from the difference in stresscoefficient between the wiring material and the interlayer insulatingfilm material is distributed to different points. Therefore, the crack,peeling or the like of the interlayer insulating film derived frommechanical or thermal stress during assembly into a package or the likeis prevented with reliability, thereby preventing the occurrence offailure.

In the sixth embodiment, the dummy wiring structures providing the chipstrength reinforcement 5 have the same sectional configuration as thatof the first embodiment shown in FIG. 10. However, this sectionalconfiguration may be replaced with that of the second embodiment shownin FIG. 11 or that of the third embodiment shown in FIGS. 13 and 14.

In the first to sixth embodiments and their modified examples, thebottommost-layer wiring 32 may be replaced with an impurity layer formedin the surface of the semiconductor substrate.

In the first to sixth embodiments and their modified examples, theplurality of dummy wiring structures providing the chip strengthreinforcements 5 to 7 may be replaced with wiring structures arranged inthe same manner as the dummy wiring structures to function as signallines or power source lines.

In the first to sixth embodiments and their modified examples, for thepurpose of preventing the crack, peeling or the like of the interlayerinsulating film with high reliability, at least one of the dummy wiringstructures providing the chip strength reinforcement 5, 6 or 7preferably has a portion extending in a certain direction in at leastone of the wiring layers and another portion extending in a differentdirection in the same wiring layer and being connected to the certainportion.

1-13. (canceled)
 14. A semiconductor device comprising: a plurality ofinterlayer insulating films stacked on a semiconductor substrate; atleast three or more wiring layers formed in the plurality of interlayerinsulating films; and a chip strength reinforcement formed in theplurality of interlayer insulating films, wherein the chip strengthreinforcement is made of a plurality of dummy wiring structures, each ofthe plurality of dummy wiring structures is formed to extend across andwithin two or more of the wiring layers including only one or none ofthe bottommost wiring layer and the topmost wiring layer using a viaportion, and the plurality of interlayer insulating films include afirst interlayer insulating film which includes a first silicon carbonnitride film, and a first carbon-containing silicon oxide film formedabove the first silicon carbon nitride film.
 15. The semiconductordevice of claim 14, wherein at least one of the plurality of dummywiring structures has a first wiring layer formed in the firstinterlayer insulating film, and the first carbon-containing siliconoxide film is formed to be in contact with a side surface of the firstwiring layer.
 16. The semiconductor device of claim 14, wherein theplurality of interlayer insulating films include a second interlayerinsulating film which includes a second silicon carbon nitride filmformed on the first interlayer insulating film, and a secondcarbon-containing silicon oxide film formed above the second siliconcarbon nitride film.
 17. The semiconductor device of claim 16, whereinat least one of the plurality of dummy wiring structures includes afirst wiring layer formed in the first interlayer insulating film, andthe second silicon carbon nitride film is formed to be in contact withan upper surface of the second wiring layer.
 18. The semiconductordevice of claim 16, wherein at least one of the plurality of dummywiring structures includes a first wiring layer formed in the firstinterlayer insulating film, a second wiring layer formed in the secondinterlayer insulating film, and a first via portion which is formedbelow the second wiring layer in the second interlayer insulating film,and connects the first wiring layer and the second wiring layer.
 19. Thesemiconductor device of claim 18, wherein the first via portion isformed to penetrate the second silicon carbon nitride film.
 20. Thesemiconductor device of claim 16, wherein the second silicon carbonnitride film is formed to be in contact with the first carbon-containingsilicon oxide film.
 21. The semiconductor device of claim 14, whereinthe first interlayer insulating film includes another insulating filmformed between the first silicon carbon nitride film and the firstcarbon-containing silicon oxide film.
 22. The semiconductor device ofclaim 14, wherein at least two of the plurality of dummy wiringstructures have at least a portion formed in the same wiring layer. 23.The semiconductor device of claim 14, wherein at least one of a pair ofdummy wiring structures among the plurality of dummy wiring structureshas a portion formed in one of the wiring layers in which the other ofthe pair is not formed.
 24. The semiconductor device of claim 14,wherein at least two of the plurality of dummy wiring structures have aportion formed in the bottommost wiring layer.
 25. The semiconductordevice of claim 14, wherein at least one of the plurality of dummywiring structures has a portion extending in a certain direction in atleast one of the wiring layers and another portion extending in adifferent direction in the same wiring layer and being connected to thecertain portion.
 26. The semiconductor device of claim 14, wherein eachof the plurality of dummy wiring structures contains copper.
 27. Thesemiconductor device of claim 14, wherein the plurality of dummy wiringstructures are provided at corners of a chip region of the semiconductorsubstrate.
 28. The semiconductor device of claim 14, wherein at leastone of the plurality of dummy wiring structures does not include thetopmost wiring layer, and is formed to extend across and within two ormore wiring layers including the bottommost wiring layer using a viaportion.
 29. The semiconductor device of claim 14, wherein at least oneof the plurality of dummy wiring structures does not include thebottommost wiring layer, and is formed to extend across and within twoor more wiring layers including the topmost wiring layer using a viaportion.
 30. The semiconductor device of claim 14, wherein at least oneof the plurality of dummy wiring structures is formed to extend acrossand within two or more wiring layers including none of the topmostwiring layer and the bottommost wiring layer using a via portion. 31.The semiconductor device of claim 15, wherein the first wiring layerincludes a layer containing copper.
 32. The semiconductor device ofclaim 15, wherein the first wiring layer includes a layer containingtantalum, and a layer containing copper.
 33. The semiconductor device ofclaim 15, wherein the first wiring layer includes a layer containingtantalum nitride, and a layer containing copper.
 34. The semiconductordevice of claim 14, further comprising: a seal ring provided at aperiphery of a chip region of the semiconductor substrate, wherein thechip strength reinforcement is arranged in the chip region near the sealring.
 35. The semiconductor device of claim 14, wherein the firstsilicon carbon nitride film is made of SiCN, and the firstcarbon-containing silicon oxide film is made of SiOC.
 36. Thesemiconductor device of claim 14, wherein the plurality of interlayerinsulating films includes a second interlayer insulating film whichincludes a second carbon nitride film formed on the first interlayerinsulating film, and a second carbon-containing silicon oxide filmformed above the second silicon carbon nitride film, at least one of theplurality of dummy wiring structures includes a first wiring layerformed in the first interlayer insulating film, the firstcarbon-containing silicon oxide film is formed to be in contact with aside surface of the first wiring layer, and the second silicon carbonnitride film is formed to be in contact with an upper surface of thefirst wiring layer.
 37. The semiconductor device of claim 36, whereinthe at least one of the plurality of dummy wiring structures includes asecond wiring layer formed in the second interlayer insulating film, anda first via portion which is formed below the second wiring layer in thesecond interlayer insulating film, and connects the first wiring layerand the second wiring layer, the first via portion is formed topenetrate the second silicon carbon nitride film, the second siliconcarbon nitride film is formed to be in contact with the firstcarbon-containing silicon oxide film, and the first interlayerinsulating film includes another insulating film formed between thefirst silicon carbon nitride film and the first carbon-containingsilicon oxide film.
 38. The semiconductor device of claim 37, whereinthe first silicon carbon nitride film and the second silicon carbonnitride film are made of SiCN, and the first carbon-containing siliconoxide film and the second carbon-containing silicon oxide film are madeof SiOC.
 39. The semiconductor device of claim 38, wherein each of thefirst wiring layer and the second wiring layer includes a layercontaining tantalum, and a layer containing copper.